Description
The aim of this project is to optimize the growth conditions of a carbonization layer of 3C-SiC on a different Si substrate to obtain relaxed interface between these two materials, which is crucial for obtaining high-tech electronic devices commonly used by everyone. Moreover, this solution makes it possible to produce new generation electronic devices compatible with present silicon technology. The goal includes understanding and developing the growth process of the 3C buffer layer on the silicon substrate. After having achieved the set goal, the optimized 3C-SiC on the Si substrate will be obtained, which could lead to the massive production of new, much faster electronic devices. Due to the potential offered by this material and its applicability to science and industry, it seems possible to develop the branch of high-tech electronics based on 3C-SiC on Si and open new scientific opportunities.
Summary of project results
The aim of this project was to optimize the growth conditions of a carbonization layer of 3C-SiC on a different Si substrate to obtain a relaxed interface between these two materials, which is crucial for producing high-tech electronic devices, commonly used by everyone. This solution makes it possible to produce next-generation electronic devices compatible with present silicon technology. The main goal included understanding and developing the growth process of the 3C buffer layer on the silicon substrate, which results in optimization of the growth technology. After having achieved the set goal, the optimized 3C-SiC on the Si substrate was successfully obtained, thus bringing us closer to the mass production of new, much faster electronic devices. The correlation between the crystalline quality of the grown 3C layers and both the process parameters and different Si substrates was performed. Due to the potential offered by this material and its applicability to science and industry, it seems possible to develop a branch of new high-tech electronics based on 3C-SiC templates on Si and open new scientific opportunities. This was proved by preliminary growth of thick 3C-SIC, graphene and gallium nitride, which could become the application area for this material as the low-cost 3C-SiC/Si template, so awaited in electronics industry. Based on the results obtained in this project we could also apply for further scientific projects in which we will elaborate growth of gallium nitride, graphene or commonly used power devices from thick 3C-SiC. For reaching all these goals we had to ensure the proper functioning of an epitaxial reactor (spare parts such as mass flow controllers or a pressure sensor), Scanning Electron Microscope (service) and Atomic Force Microscope (tips). Samples storing was also very important so we had to buy appropriate ultra clean boxes. Moreover, for the realization of the projects our team worked on the computers with proper specialist software (Origin, MS Office) and printers which we bought during the realization of the project. In consequence of all these financial activities, the ultimate goal, which was obtaining good crystallographic quality 3C-SiC carbonization layer on silicon substrates, could have been attained.
Summary of bilateral results